Linking ab initio energetics to experiment: kinetic Monte Carlo simulation of transient enhanced diffusion of B in Si

Materials Research Society Symposium - Proceedings

Volumn 538, Issue , 1999, Pages 291-295

  Theiss, Silva K ^a   Caturla, M J ^a   de la Rubia, T Diaz ^a   Johnson, M C ^a   Ural, Ant ^a   Griffin, P B ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; BORON; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; SILICON; TEMPERATURE;

ATOMIC LEVEL DIFFUSION; ATOMIC MIGRATION; DEFECT REACTION PHENOMENA; TRANSIENT ENHANCED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0032591781     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)