Ab initio pseudopotential calculations of dopant diffusion in Si

Computational Materials Science

Volumn 12, Issue 4, 1998, Pages 309-318

  Zhu, Jing ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Ab initio pseudopotential method; Boron dopant; Carbon dopant; Defect; Impurity cluster; TED (transient enhanced diffusion)

Indexed keywords

EID: 0000971763     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0256(98)00023-8     Document Type: Article

References (28)

1. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61 (1989) 289.
2. A.E. Mitchel, Nucl. Instr. Meth. B 37/38 (1989) 379.
3. P.A. Stolk, D.J. Eaglesham, H.J. Gossmann, J.M. Poate, Appl. Phys. Lett. 66 (1995) 1370.
4. L. Pelaz, G.H. Gilmer, M. Jaraiz, H.J. Gossmann, C.S. Rafferty, D.J. Eaglesham, J.M. Poate, Mat. Res. Soc. Symp. Proc. 469 (1997) 341.
5. M. Caturla, T. Diaz de la Rubia, J. Zhu, M. Johnson, Mat. Res. Soc. Symp. Proc. 469 (1997) 335.
6. C.S. Nichols, C.G. Van de Walle, S.T. Pantelides, Phys. Rev. Lett. 62 (1989) 1049; Phys. Rev. B 40 (1989) 5484.
7. C.S. Nichols, C.G. Van de Walle, S.T. Pantelides, Phys. Rev. Lett. 62 (1989) 1049; Phys. Rev. B 40 (1989) 5484.
8. E. Tarnow, Europhys. Lett. 16 (1991) 449; E. Tarnow, J. Phys.: Condens. Matter 4 (1992) 5405.
9. E. Tarnow, Europhys. Lett. 16 (1991) 449; E. Tarnow, J. Phys.: Condens. Matter 4 (1992) 5405.
10. R.B. Capaz, A. Dal Pino, Jr., J.D. Joannopoulos, Phys. Rev. B 50 (1994) 7439.
11. D.M. Ceperley, B.J. Alder, Phys. Rev. Lett. 45 (1980) 566.
12. J.P. Perdew, A. Zunger, Phys. Rev. B 23 (1981) 5048.
13. N. Troullier, J.L. Martins, Phys. Rev. B 43 (1991) 1993.
14. L. Kleinman, D.M. Bylander, Phys. Rev. Lett. 48 (1982) 1425.
15. H.J. Monkhorst, J.D. Pack, Phys. Rev. B 13 (1976) 5188.
16. W. Kohn, L.J. Sham, Phys. Rev. 140 (1965) A1133.
17. J. Zhu, T. Diaz de la Rubia, L.H. Yang, C. Mailhiot, G.H. Gilmer, Phys. Rev. B 54 (1996) 4741.
18. H.R. Schober, Phys. Rev. B 39 (1989) 13013.
19. J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Perderson, D.J. Singh, C. Fiolhais, Phys. Rev. B 46 (1992) 6671; 48 (1993) 4978.
20. J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Perderson, D.J. Singh, C. Fiolhais, Phys. Rev. B 46 (1992) 6671; 48 (1993) 4978.
21. M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia, Phys. Rev. B 55 (1997) 14279.
22. U. Gösele, A. Plößl, T.Y. Tan, in: G.R. Srinivasan, C.S. Murthy, S.T. Dunham (Eds.), Process Physics and Modeling in Semiconductor Technology, Electrochemical Society, Pennington, NJ, 1996, p. 309.
23. G.D. Watkins, Phys. Rev. B 12 (1975) 5824; G.D. Watkins, private communication.
24. G.D. Watkins, Phys. Rev. B 12 (1975) 5824; G.D. Watkins, private communication.
25. G.D. Watkins, K.L. Brower, Phys. Rev. Lett. 36 (1976) 1329.
26. L.W. Song, G.D. Watkins, Phys. Rev. B 42 (1990) 5759.
27. F. Rollert, N.A. Stolwijk, H. Mehrer, Proceedings of 15th International Conference on Defects in Semiconductors, Budapest, 1998.
28. L.W. Song, X.D. Zhan, B.W. Benson, G.D. Watkins, Phys. Rev. B 42 (1990) 5765.