3D atomistic simulations of submicron device fabrication

Materials Research Society Symposium - Proceedings

Volumn 490, Issue , 1998, Pages 3-8

  Bunea, Marius M ^a   Dunham, Scott T ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; ATOMS; BORON; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION; ION IMPLANTATION; MONTE CARLO METHODS; MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

LATTICE MONTE CARLO METHOD; NMOS STRUCTURE; SUBMICRON DEVICE FABRICATION; THREE DIMENSIONAL ATOMISTIC SIMULATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032302291     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)