Ab-initio pseudopotential calculations of boron diffusion in silicon

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 91-96

  Windl, W ^a   Bunea, M M ^b   Stumpf, R ^a   Dunham, S T ^c   Masquelier, M P ^a  

^a MOTOROLA INC   (United States)

^b Boston University   (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION IN SOLIDS; FERMI LEVEL; SEMICONDUCTING BORON;

FERMI LEVEL POSITION;

SEMICONDUCTING SILICON;

EID: 0032663592     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-91     Document Type: Article

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