Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Journal of Physics D: Applied Physics

Volumn 33, Issue 21, 2000, Pages

  Ciofi, C ^a   Neri, B ^b  

^a INFM   (Italy)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEGRADATION; ELECTRIC FREQUENCY MEASUREMENT; INTEGRATED CIRCUIT TESTING; MOS CAPACITORS; SPURIOUS SIGNAL NOISE;

LOW-FREQUENCY NOISE MEASUREMENT (LFNM);

VLSI CIRCUITS;

EID: 0034322231     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/21/201     Document Type: Article

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