Wafer level measurement system for SARF characterization of metal lines

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1851-1854

  Ciofi, C ^a   De Marinis, M ^a   Neri, B ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE MEASUREMENT; INTEGRATED CIRCUIT TESTING; PROBES; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; ELECTRIC RESISTANCE; POINT CONTACTS; WSI CIRCUITS;

PROBE STATION; SPECTRAL ANALYSIS OF RESISTANCE FLUCTUATIONS (SARF); WAFER LEVEL CHARACTERIZATION;

WSI CIRCUITS; INTEGRATED CIRCUIT TESTING;

EID: 0030274026     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00213-2     Document Type: Article

References (4)

1. B. Neri, A. Diligenti, P.E. Bagnoli, Electromigration and low-frequency resistance fluctuations in aluminum thin-film, IEEE Trans. on Electron Devices ED-34, 2317, (1987).
2. A. Diligenti, P.E. Bagnoli, B. Neri, S. Bea and L. Mantellassi, A study of electromigration in aluminum and aluminum-silicon thin film resistors using noise technique, Solid State El.32,. 11 (1989).
3. A.M. Yassine, T.M. Chen and B.A. Beitman, Characterization of probe contact noise for probes used in wafer-level testing, IEEE El. Dev. Letters 12, 200, (1991).
4. C. Ciofi, M. De Marinis, B. Neri, Voltage and current sources for ultra low noise measurement systems, Alta Frequenza 7, 55, (1995).