SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 36, Issue 7-8 SPEC. ISS., 1996, Pages 1045-1050

Electromigration in Al based stripes: Low frequency noise measurements and MTF tests

(4) Bagnoli, P E a Ciofi, C a Neri, B a Pennelli, G a

a UNIVERSITY OF PISA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTROMIGRATION; FAILURE ANALYSIS; MATERIALS TESTING; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; STRESSES;

ALUMINUM STRIPES; LOW FREQUENCY NOISE MEASUREMENTS; MEDIAN TIME TO FAILURE TESTING; STRESS CONDITIONS; THERMAL RESISTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030193004 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/0026-2714(96)00028-5 Document Type: Article

Times cited : (10)

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