Noise and fluctuations in submicrometric al-si interconnect lines

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1454-1459

  Neri, Bruno ^a,b   Ciofi, Carmine ^a   Dattilo, Vincenzino ^a  

^a UNIVERSITY OF PISA   (Italy)

^b INFN SEZIONE DI PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTROMIGRATION; SPURIOUS SIGNAL NOISE;

ALUMINUM SILICON INTERCONNECT LINES; LOW FREQUENCY NOISE (LFN);

SEMICONDUCTOR DEVICES;

EID: 0031235274     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622601     Document Type: Article

References (41)

1. T.M. Chen, T. P. Djeu, and R. D. Moore, "Electromigration and 1/f noise of aluminum thin films," in Proc. 1985 IEEE Rel. Phy. Symp., 1985, pp. 87-92.
2. J.C. Cottle and N. S. Klonaris, J. Electron. Mater., vol. 19, p. 1201, 1990.
3. T.M. Chen, J. G. Cottle, and L. M. Head, "Excess noise in thin aluminum based metal films," in Proc. 9th Int. Conf. "Noise in Physical System," Montreal, P.Q., Canada, 1987, pp. 521-524.
4. A. Diligenti, B. Neri, P.E. Bagnoli, A. Barsanti, and M. Rizzo, "Electromigration detection by means of low-frequency noise measurements in thin-film interconnections," IEEE Electron Device Lett., vol. EDL-6, pp. 606-608, 1985.
5. B. Neri, A. Diligenti, and P.E. Bagnoli, "Electromigration and low-frequency resistance fluctuations in aluminum thin-film interconnections," IEEE Trans. Electron Devices, vol. ED-34, pp. 2317-2322, 1987.
6. P.E. Bagnoli, A. Diligenti, B. Neri, and S. Ciucci, "Noise measurements in thin-film interconnections: A nondestructive technique to characterize electromigration," J. Appl. Phys., vol. 63, pp. 1448-1451, 1988.
7. C. Ciofi, A. Diligenti, and B. Neri, "Electromigration noise in submicrometric lines," in Proc. 13th Int. Conf. "Noise in Physical Systems and 1/f Fluctuation," Palanga, Lithuania, 1995, pp. 618-621.
8. F.N. Hooge and A. M. Hoppenbrouwers, "1/f noise in continuous thin gold films," Physica, vol. 45, pp. 386-392, 1969.
9. J.L. Vossen, "Screening of metal film defects by current noise measurements," Appl. Phys. Lett., vol. 23, pp. 287-289, 1973.
10. J.W. Eberhard and P. M. Horn, "Excess 1/f noise in metals," Phys. Rev. B, vol. 18, pp. 6681-6693, 1977.
11. G.P. Zhigal'skiy and I. S. Bakshi, Excess Noise in Thin Aluminum Films, Scripta Publishing Co., pp. 61-67, 1981.
12. D.M. Fleetwood and N. Giordano, "Resistivity dependence of 1/f noise in metal films," Phys. Rev. B, vol. 27, pp. 667-671, 1983.
13. J. Bisschop and A.H. de Kuijper, "Temperature dependence of 1/f noise in thin bismuth films," J. Appl. Phys., vol. 55, pp. 1353-1358, 1984.
14. V.V. Potemkin, I. S. Bakshi, and G. P. Zhigal'skiy, 1/f-Type Noise in Polycristalline Aluminum Films. Potomac, MD: Scripta, 1984, pp. 89-93.
15. R.H. Koch, J. R. Lloyd, and J. Cronin, "1/f noise and grain-boundary diffusion in aluminum and aluminum alloys," Phys. Rev. Lett., vol. 55, pp. 2487-2490, 1985.
16. B. Neri, B. Pellegrini, and R. Saletti, "Ultra low-noise preamplifier for low-frequency noise measurements in electron devices," IEEE Trans. Instrum. Meas., vol. 40, pp. 2-6, 1991.
17. C. Ciofi, M. De Marinis, and B. Neri, "Ultra low noise, PC-based measurement system for the characterization of the metallizations of integrated circuits," in Proc. IMTC'96, Brussels, Belgium, 1996, pp. 319-323.
18. G. Bertotti, M. Celasco, F. Fiorillo, and P. Mazzetti, "Application of the current noise technique to the investigation on dislocations in metal during plastic deformation," J. Appl. Phys., vol. 50, pp. 6948-6955, 1979.
19. K.P. Rodbell, P. J. Ficalora, and R. Koch, "Effect of hydrogen on electromigration and 1/f noise in gold films," Appl. Phys. Lett., vol. 50, pp. 1415-1416, 1987.
20. J.A. Schwarz, A. J. Patrinos, I. S. Bakshee, E. A. Salkov, and B. I. Khizhnyak, "Grain size dependence of 1/f noise in Al-Cu thin-film interconnection," J. Appl. Phys., vol. 70, pp. 1561-1564, 1991.
21. W. Yang and Z. Çelik-Butler, "A model for electromigration and low-frequency noise in thin metal films," Solid-State Elecron., vol. 34, pp. 911-916, 1991.
22. J.G. Cottle and T. M. Chen, "Excess noise and its relationship to the activation energies associated with electromigration in thin Al and Al-Si films," in Proc. 4th Int. VLSI Multilevel Interconnection Conf., Santa Clara, CA, 1987.
23. _, "Characterization of excess noise in VLSI interconnections," in Proc. of IEEE Southeastcon, Tampa, FL, 1987, vol. 1, pp. 166-170.
24. D.M. Liou, J. Gong, and C. C. Chen, "Electromigration effect on low-frequency noise in Al thin films," Jpn. J. Appl. Phys., vol. 30, pp. 708-710, 1991.
25. R.G. Smith, G. A. Biery, and K. P. Rodbell, "1/f noise and electromigration in aluminum films: The role of film microstructure and texture," Appl. Phys. Lett., vol. 65, pp. 315-317, 1994.
26. P. Dutta and P.M. Horn, "Low-frequency fluctuations in solids: 1/f noise," Rev. Mod. Phys., vol. 53, pp. 497-516, 1981.
27. Z. Çelik-Butler, W. Yang, H.H. Hoang, and W. R. Hunter, "Characterization of electromigration parameters in VLSI metallizations by 1/f noise measurements," Solid-State Electron., vol. 34, pp. 185-188, 1991.
28. S. Chicca, C. Ciofi, A. Diligenti, A. Nannini, and B. Neri, "Dependence of the electromigration noise on geometrical and structural characteristic in aluminum-based resistors," IEEE Trans. Electron Devices, vol. 41, pp. 2173-2175, 1994.
29. R.H. Koch, "Relationship between low-frequency noise and resistance drift in metal films," Phys. Rev. B, vol. 48, pp. 12217-12221, 1993.
30. 2 noise spectrum derived from electromigration-induced resistance change," Jpn. J. Appl. Phys., vol. 29, pp. 1283-1285, 1990.
31. B. Neri, C. Ciofi, and V. Dattilo, "Comments on the utilization of noise measurements for the characterization of electromigration in metal lines," accepted for presentation at the ESREF'97.
32. T.M. Chen and A. M. Yassine, "Electrical noise and VLSI interconnect reliability," IEEE Trans. Electron Devices, vol. 41, pp. 2165-2174, 1994.
33. a noise and electromigration in Al-based thin-film interconncts," in Proc. 13th Int. Conf. Noise Phys. Syst. and 1/f Fluctuations, V. Bareikis and R. Katilius, Eds. New York: World Scientific, 1995, pp. 614-617.
34. C. Ciofi, A. Diligenti, F. Giacomozzi, A. Nannini, and B. Neri, "Low-frequency electromigration noise and film microstructure in Al/Si stripes: Electrical measurements and TEM analysis," J. Electron. Mater., vol. 22, p. 1323, 1993.
35. α noise and fabrication variation of TiW/Al VLSI interconnections," IEEE Electron Device Lett., vol. 11, pp. 523-526, 1990.
36. A. Diligenti, P.E. Bagnoli, B. Neri, S. Bea, and L. Mantellassi, "A study of electromigration in aluminum and aluminum-silicon thin-film resistors using noise technique," Solid-State Electon., vol. 32, pp. 11-16, 1989.
37. Z. Çelik-Butler and M. Ye, "Prediction of electromigration failure in W/Al-Cu multilayer metallizations by 1/f noise measurements," Solid-State Electron., vol. 35, pp. 1209-1212, 1992.
38. P.E. Bagnoli, C. Ciofi, B. Neri, and G. Pennelli, "Electromigration in Al based stripes: Low-frequency noise measurements and MTF test," Microelectron. Reliab., to be published.
39. A. Diligenti, P.E. Bagnoli, and B. Neri, "Evaluation of electromigration activation energy by means of noise measurements and MTF tests," in Proc. 17th Europ. Solid-State Dev. Res. Conf. (ESSDERC). Bologna, Spain: Tecnoprint, 1987, pp. 213-217.
40. J.R. Cahoon and O. D. Sherby, Metall. Trans., vol. 23A, p. 2491, 1992.
41. C.P. Flynn, Point Defects and Diffusion. Oxford, U.K.; Clarendon Press, 1972.