High tolerance to radiation effects and low noise performance of acute - A complementary bipolar soic technology

IEEE Transactions on Nuclear Science

Volumn 43, Issue 2 PART 2, 1996, Pages 761-768

  Pawlikiewicz, Adam H ^a  

^a United Technologies Kidde   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DOSIMETRY; INTEGRATED CIRCUITS; IRRADIATION; PERFORMANCE; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TECHNOLOGY;

ADVANCED COMPLEMENTARY BIPOLAR PROCESS FROM UNITED TECHNOLOGIES; HOOGES CONSTANT; LOW NOISE PERFORMANCE; RADIATION TOLERANCE;

RADIATION DETECTORS;

EID: 0030127521     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.491526     Document Type: Article

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