On-state breakdown in power HEMTs: Measurements and modeling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 553-556

  Somerville, Mark H ^a   Blanchard, Roxann ^a   del Alamo, Jesus A ^a   Duh, George ^a   Chao, P C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE CURRENT EXTRACTION; THERMIONIC FIELD EMISSION;

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); IONIZATION OF SOLIDS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0347981771     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)