Numerical Analysis of Kink Effect in HJFET with a Heterobuffer Layer

IEEE Transactions on Electron Devices

Volumn 40, Issue 3, 1993, Pages 493-497

  Kunihiro, Kazuaki ^a   Yano, Hitoshi ^a   Goto, Norio ^a   Ohno, Yasuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; HETEROJUNCTIONS; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

HETEROBUFFER LAYERS; HETEROJUNCTION FET; HOLE TRAP CONCENTRATION; IMPACT IONIZATION; KINK EFFECT; SUBMICROMETER GATE HETEROJUNCTION FET;

FIELD EFFECT TRANSISTORS;

EID: 0027560908     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199352     Document Type: Article

References (15)

1. D. B. Gibod, J. P. André, P. Baudet, and J. P. Hallais, “The use of GaAs-(Ga, Al)As heterostructures for FET devices,” IEEE Trans. Electron Devices, vol. ED-27, no. 6, pp. 1141–1147, 1980.
2. W. I. Wang, S. Judaprawira, C. E. C. Wood, and L. F. Eastman, “Molecular beam epitaxial GaAs-AlxGa1-xAs heterostructures for metal semiconductor field effect transistor applications,” Appl. Phys. Lett., vol. 38, no. 9, pp. 708–710, 1981.
3. W. Kopp, H. Morkoç, T. J. Drummond, and S. L. Su, “Characteristics of submicron gate GaAs FET’s with Al0.3 Ga 0.7 As buffers: Effects of interface quality,” IEEE Electron Devices Lett., vol. EDL-3, no. 2, pp. 46–48, 1982.
4. B. J. V. Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, “Parasitic bipolar effects in submicrometer GaAs MESFET’s,” IEEE Electron Device Lett., vol. EDL-8, no. 5, pp. 188–190, 1987.
5. H. I. Fujishiro, T. Saito, S. Nishi, and Y. Sano, “Sidegating effects in inverted AlGaAs/GaAs HEMT,“Japan. J. Appl. Phys., vol. 27, no. 9, pp. 1742–1745. 1988.
6. J. B. Kuang, P. J. Tasker, G. W. Wang, Y. K. Chen, L. F. Eastman, O. A. Aina, H. Hier, and A. Fathimulla, “Kink effect in submicro-meter-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFET’s,” IEEE Electron Device Lett., vol. 9, no. 12, pp. 630–632, 1988.
7. S. Tehrani, H. Goronkin, M. M. Hoogstra, G. N. Maracas, J. A. Curless, G. D. Kramer, M. S. Peffley, and R. K. Tsui, “Excess drain current in heterojunction FET’s due to substrate space-charge-limited current,” IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1591–1596, 1987.
8. J. Tihanyi and H. Schlötterer, “Properties of ESFI MOS transistors due to the floating substrate and the finite volume,” IEEE Trans. Electron Devices, vol. ED-22, no. 11, pp. 1017–1023, 1975.
9. K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling,” IEEE Trans. Electron Devices, vol. ED-32, no. 2, pp. 458–462, 1985.
10. H. Yano, S. Kumashiro, N. Goto, and Y. Ohno, “Two dimensional device simulator with deep trap model for compound semiconductor devices,” in IEDM Tech. Dig., Dec. 1989, pp. 151–154.
11. Y. Okuto and C. R. Crowell, “Threshold energy effect on avalanche breakdown voltage in semiconductor junctions,” Solid-State Electron., vol. 18, pp. 161–168, 1975.
12. G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. E. Stillman, “Experimental determination of impact ionization coefficients in (100) GaAs,” IEEE Electron Device Lett., vol. EDL-4, no. 6, pp. 181–184, 1983.
13. W. Shockley and W. T. Read, “Statics of the recombination of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, 1952.
14. R. N. Hall, “Recombination processes in semiconductors,” Proc. Inst. Elec. Eng., vol. 106B, suppl. 17, pp. 923–931, 1959.
15. M. Hack and A. G. Lewis, “Avalanche-induced effects in polysilicon thin-film transistors,” IEEE Electron Device Lett., vol. 12, no. 5, pp. 203–205, 1991.