Physics of Breakdown in InAlAs/n+—InGaAs Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2268-2275

  del Alamo, Jesus A ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS; NARROW BANDGAP; OFF STATE BREAKDOWN;

FIELD EFFECT TRANSISTORS;

EID: 0028733497     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337438     Document Type: Article

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