Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1995, Pages 115-118

  Tkachenko, Y A ^a   Wei, C J ^a   Hwang, J C M ^a   Harris, T D ^a   Grober, R D ^a   Hwang, D M ^a   Aucoin, L ^a   Shanfield, S ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; MESFET DEVICES; PASSIVATION; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; THERMAL EFFECTS; THERMAL STRESS; TRANSCONDUCTANCE;

ELECTRICAL TEST; HOT ELECTRON INDUCED DEGRADATION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; TEMPERATURE STRESS TEST;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029232450     PISSN: 00748587     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)