Investigation and modeling of impact lonization with regard to the rf and noise behavior of hfet

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 6, 1997, Pages 977-983

  Reuter, Ralf ^a   Agethen, Michael ^a   Auer, Uwe ^a   Van Waasen, Stefan ^a   Peters, Dirk ^a   Brockerhoff, Wolfgang ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Modeling; Modfet's; Noise; Shot noise

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; EQUIVALENT CIRCUITS; IONIZATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SHOT NOISE;

GATE LEAKAGE CURRENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; IMPACT IONIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0031169958     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.588612     Document Type: Article

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