Parasitic Bipolar Effects in Submicrometer GaAs MESFET's

IEEE Electron Device Letters

Volumn 8, Issue 5, 1987, Pages 188-190

  van Zeghbroeck, Bart J ^a   Patrick, W ^a   Meier, Heinz ^a   Vettiger, Peter ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

PARASITIC BIPOLAR EFFECTS; SUBMICROMETER GALLIUM ARSENIDE MESFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0023349259     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26598     Document Type: Article

References (10)

1. W. R. Frensley, “Power-limiting breakdown effects in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-28, p. 962, 1981.
2. B. J. Van Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, “Submicrometer GaAs MESFET with shallow channel and very high transconductance,” IEEE Electron Device Lett., vol. EDL-8, pp. 118–120, Mar. 1987.
3. T. Smith, “Beyond-punchthrough current in GaAs MESFET's,” IEEE Electron Device Lett., vol. EDL-7, p. 188, 1986.
4. W. Patrick, W. S. Mackie, S. Beaumont, C. D. W. Wilkinson, and G. H. Oxley, “Very short gate-length GaAs MESFET's,” IEEE Electron Device Lett., vol. EDL-6, p. 471, 1985.
5. H. Jaeckel, V. Graf, B. J. Van Zeghbroeck, P. Vettiger, and P. Wolf, “Scaled GaAs MESFET's with gate length down to 100 nm,” IEEE Electron Device Lett., vol. EDL-7, p. 522, 1986.
6. K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon-on-insulator MOSFET's using two-carrier modeling,” IEEE Trans. Electron Devices, vol. ED-32, p. 458, 1985.
7. N. Kotani and S. Kawazu, “The effect of holes on the injection-induced breakdown in n-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-32, p. 722, 1985.
8. E. Sun, J. Moll, J. Berger, and B. Alders, “Breakdown mechanism in short-channel MOS transistors,” Proc. IEEE, p. 479, 1978.
9. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p.106.
10. K. Yamasaki, N. Kato, and M. Hirayama, “Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate length,” IEEE Trans. Electron Devices, vol. ED-32, p. 2420, 1985.