Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 700-707

  Simlinger, Thomas ^a   Brech, Helmut ^b   Grave, Thomas ^a   Selberherr, Siegfried ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; PERFORMANCE; SIMULATION; SIMULATORS; TRANSFER FUNCTIONS;

PHYSICAL MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031145998     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568029     Document Type: Article

References (16)

1. A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, A new discretization strategy of the semiconductor equations comprising momentum and energy balance, IEEE Trans. Computer-Aided Design, vol. 7, pp. 231-242, Feb. 1988.
2. T. Tang, Extension of the Scharfetter-Gummel algorithm to the energy balance equation, IEEE Trans. Electron Devices, vol. ED-31, pp. 1912-1914, Dec. 1984.
3. W.-S. Choi, J.-G. Ahn, Y.-J. Park, H.-S. Min, and C.-G. Hwang, A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm, IEEE Trans. Computer-Aided Design, vol. 13, pp. 899-908, Jul. 1994.
4. T.-W. Tang and M.-K. leong, Discretization of flux densities in device simulations using optimum artificial diffusivity, IEEE Trans. Computer-Aided Design, vol. 14, pp. 1309-1315, Nov. 1995.
5. T. Simlinger, H. Kosina, M. Rottinger, and S. Selberherr, MINIMOSNT: A generic simulator for complex semiconductor devices, in ESS-DERC'95 - 25th Europ. Solid-State Device Research Conf., H. de Graaff and H. van Kranenburg, Eds. Gif-sur-Yvette Cedex, France: Editions Frontieres, 1995, pp. 83-86.
6. R. Vankemmel, W. Schoenmaker, R. Cartuyvels, and K. De Meyer, Implementation of heterojunctions into the 2-D finite-element simulator PRISM: Some scaling considerations, Solid-State Electron., vol. 35, no. 4, pp. 571-578, 1992.
7. J. Tang and S. Laux, MONTE: A program to simulate the heterojunction devices in two dimensions, IEEE Trans. Computer-Aided Design, vol. CAD-5, pp. 645-652, Apr. 1986.
8. K. Yang, J. East, and G. Haddad, Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition, Solid-State Electron., vol. 36, no. 3, pp. 321-330, 1993.
9. J. Jones, G. Tait, S. Jones, and D. Katzer, DC and large-signal time-dependent electron transport in heterostructure devices: An investigation of the heterostructure barrier varactor, IEEE Trans. Electron Devices, vol. 42, pp. 1393-1403, Aug. 1995.
10. D. Schröder, Modeling of Interface Carrier Transport for Device Simulation. Berlin: Springer, 1994.
11. R. Bank and D. Rose, Parameter selection for Newton-like methods applicable to nonlinear partial differential equations, SIAM J. Numer. Anal, vol. 17, no. 6, pp. 806-822, 1980.
12. _, Global approximate newton methods, Numer. Math., vol. 37, pp. 279-295, 1981.
13. H. van der Vorst, BI-CGSTAB: A Fast and smoothly converging variant of BI-CG for the solution of nonsymmetric linear systems, SIAM J. Sci. Stat. Comput., vol. 13, no. 2, pp. 631-644, 1992.
14. C. Fischer and S. Selberherr, Optimum scaling of non-symmetric jacobian matrices for threshold pivoting preconditioners, in Int. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD V, Honolulu, HI, 1994, pp. 123-126.
15. Y. Saad, Preconditioning techniques for nonsymmetric and indefinite linear systems, J. Comp. Appl. Math., vol. 24, pp. 89-105, 1988.
16. P. Bhattacharya, Ed., Properties of Lattice-Matched and Strained Indium Gallium Arsenide, no. 8 in EMIS Datareviews Series, IEE INSPEC, 1993.