Power-Limiting Breakdown Effects in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 28, Issue 8, 1981, Pages 962-970

  Frensley, William R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0019606256     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20467     Document Type: Article

References (18)

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