Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

Journal of Applied Physics

Volumn 78, Issue 4, 1995, Pages 2343-2348

  Moglestue, C ^a   Buot, F A ^b   Anderson, W T ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001259057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360153     Document Type: Article

References (0)