Dependence of Ionization Current on Gate Bias in GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 40, Issue 3, 1993, Pages 498-501

  CetroniO, Antonio ^c   Lanzieri, Claudio ^c   Zanoni, Enrico ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c ALENIA SPAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ION IMPLANTATION; SEMICONDUCTING GALLIUM COMPOUNDS;

DEPLETION-MODE MESFET; DOUBLE-IMPLANT MESFET; GALLIUM ARSENIDE; IONIZATION CURRENTS;

MESFET DEVICES;

EID: 0027558843     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199353     Document Type: Article

References (8)

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