New physical model for the kink effect on InAlAs/InGaAs HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 201-204

  Somerville, Mark H ^a   del Alamo, Jesus A ^a   Hoke, William ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; IONIZATION OF SOLIDS; MODELS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE MEASUREMENT;

BARRIER INDUCED HOLE PILE UP; DEVICE ISOLATION; IMPACT IONIZATION; KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029490914     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)