Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1995, Pages 205-211

  Canali, Claudio ^a   Cova, Paolo ^a   De Bortoli, Eros ^a   Fantini, Fausto ^a   Meneghesso, Gaudenzio ^a   Menozzi, Roberto ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRON TRANSITIONS; FAILURE ANALYSIS; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING;

ACCELERATED LIFE TESTING; ALUMINUM GALLIUM ARSENIDE; DRAIN CURRENTS; ELECTRON RECOMBINATION; ELECTRON TRAPPING; HOLES; INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029213769     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1995.363697     Document Type: Conference Paper

References (17)