Structure asymmetry effects in the optical gain of piezostrained InGaN quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 756-764

  Peng, L H ^a   Hsu, Y C ^a   Chuang, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL SYMMETRY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC EXCITATION; ELECTRONIC PROPERTIES; GAIN MEASUREMENT; OPTICAL PROPERTIES; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; STRAIN;

BAND FILLING EFFECTS; CARRIER CONFINEMENT; CARRIER INJECTION; CHARGE SCREENING EFFECTS; MANY BODY EFFECTS; OPTICAL GAIN; PIEZOSTRAINED QUANTUM WELLS; PULSED CURRENT EXCITATION; SEMICONDUCTING INDIUM GALLIUM NITRIDE; STRUCTURE ASYMMETRY EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033123729     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788448     Document Type: Article

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