Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells

IEEE Photonics Technology Letters

Volumn 9, Issue 6, 1997, Pages 728-730

  Wang, Jin ^a   Jeon, J B ^a   Sirenko, Yu M ^a   Kim, K W ^a  

^a Campus Box 7908   (United States)

Author keywords

Electric field effects; Optical polarization; Optoelectronic devices; Piezoelectric semiconductor materials devices; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers; Strain

Indexed keywords

CALCULATIONS; ELECTRIC FIELD EFFECTS; LIGHT POLARIZATION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PIEZOELECTRIC MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; STRAIN;

COUPLING POISSON EQUATIONS; PIEZOELECTRIC EFFECT; SCHRODINGER EQUATION;

QUANTUM WELL LASERS;

EID: 0031164186     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.584971     Document Type: Article

References (13)

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