Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

Applied Physics Letters

Volumn 74, Issue 1, 1999, Pages 82-84

  Kollmer, H ^a   Im, Jin Seo ^a   Heppel, S ^a   Off, J ^a   Scholz, F ^a   Hangleiter, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES;

MULTIPLE QUANTUM WELLS; OPTICAL TRANSITIONS; PIEZOELECTRIC FIELDS; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033521264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122958     Document Type: Article

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