Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 513-518

  Vashchenko, V A ^a   Kozlov, N A ^a   Martynov, Y B ^a   Sinkevitch, V F ^a   Tager, A S ^a  

^a Pulsar Science Research Inst   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRIC FIELD RECONSTRUCTION; FIXED DRAIN CURRENT; FIXED GATE BIAS; HYDRODYNAMIC ISOTHERMAL MODEL; ISOTHERMAL DRAIN BREAKDOWN; NEGATIVE DIFFERENTIAL CONDUCTIVITY;

MESFET DEVICES;

EID: 0030129156     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485531     Document Type: Article

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