A New Drain-Current Injection Technique for the Measurement of Off-State Breakdown Voltage in FET’s

IEEE Transactions on Electron Devices

Volumn 40, Issue 8, 1993, Pages 1558-1560

  Bahl, Sandeep R ^a   del Alamo, Jesus A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; VOLTAGE MEASUREMENT;

DRAIN CURRENT; OFF STATE BREAKDOWN VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0027649811     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223723     Document Type: Article

References (17)

1. L. D. Nguyen, L. E. Larson, and U. K. Mishra, “Ultra-high-speed modulation-doped field-effect transistors: A tutorial review,” Proc. IEEE, vol. 80, no. 4, p. 494, 1992.
2. P. Saunier, R. J. Matyi, and K. Bradshaw, “A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W /mm at 55 GHz,” IEEE Electron Device Lett., vol. 9, no. 8, p. 397, 1988.
3. J. B. Boos and W. Kruppa, “InAlAs/InGaAs/InP HEMT’s with high breakdown voltages using double-recess gate process,” Electron. Lett., vol. 27, no. 21, p. 1909, 1991.
4. K. Hikosaka, Y. Hirachi, and M. Abe, “Microwave power double-heterojunction HEMT’s,” IEEE Trans. Electron Devices, vol. ED-33, no. 1986.
5. B. Kim, R. J. Matyi, M. Wurtele, K. Bradshaw, and H. Q. Tserng, “Millimeter-wave AlGaAs/InGaAs/GaAs quantum well power MISFET,” in IEDM Tech. 1988, 168.
6. T. Sonoda, S. Sakamoto, N. Kasai, S. Tsuji, M. Yamanouchi, S. Takamiya, and Y. Kashimoto, “New pseudomorphic n - /n + GaAs/InGaAs/GaAs power HEMT with high breakdown voltages,” Electron. Lett., vol. 27, no. 14, p. 1303, 1991.
7. C-S. Chang and D-Y.S. Day, “An analytical solution of the two-dimensional Poisson equation and a model of gate current and breakdown voltage for reverse gate-drain bias in GaAs MESFET’s,” Solid-State Electron., vol. 32, no. 11, p. 971, 1989.
8. T. Itoh, A. S. Brown, L. H. Camnitz, G. W. Wicks, J. D. Berry, and L. F. Eastman, “Depletion- and enhancement-mode Al 0.48 ln 0.52 As/Ga 0.47 ln 0.53 As modulation-doped field-effect transistors with a recessed gate structure,” in Inst. Phys. Conf. Ser., no. 79, p. 571, 1985.
9. P. C. Chao, M. Shur, M. Y. Kao, and B. R. Lee, “Breakdown walkout in AlGaAs/GaAs HEMT’s,” IEEE Trans. Electron Devices, vol.
10. S. H. Wemple, W. C. Niehaus, H. M. Cox, J. V. Dilorenzo, and W. O. Schlosser, “Control of gate-drain avalanche in GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-27, no. 6, p. 1013, 1980.
11. R. J. Trew and U. K. Mishra, “Gate breakdown in MESFET’s and HEMT’s,” IEEE Electron Device Lett., vol. 12, no. 10, p. 524, 1991.
12. T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of the drain breakdown voltage of GaAs power MESFET’s by a simple recess structure,” IEEE Trans. Electron Devices, vol. ED-25, no. 6, p. 563, 1978.
13. F. Terncamani, Y. Crosnier, D. Lippens, and G. Salmer, “Modeling and experimental study of breakdown mechanisms in multichannel AlGaAs/GaAs power HEMT’s,” Microwave Opt. Technol. Lett., vol. 3, no. 6, p. 195, 1990.
14. M. Fukuta, T. Mimura, H. Suzuki, and K. Suyama, “4-GHz 15-W power GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-25, no. 6, p. 559, 1978.
15. T. M. Barton and P. H. Ladbroke, “The role of the device surface in the high voltage behavior of the GaAs MESFET, ” Solid-State Electron., vol. 29, no. 8, p. 807, 1986.
16. P. Saunier, private communication, 1991.
17. S. R. Bahl and J. A. del Alamo., “Physics of breakdown in In AlAs/n + -InGaAs heterostructure field-effect transistors,” presented at the 5th Int. Conf. on InP and Related Materials, Paris, France, Apr. 1993.