Breakdown mechanisms in pseudomorphic inalas/inxga1-xas high electron mobility transistors on inp. Ii: On-state

Japanese Journal of Applied Physics

Volumn 34, Issue 4R, 1995, Pages 1805-1808

  Dickmann, Jürgen ^a   Schildberg, Steffen ^a,b   Riepe, Klaus ^a   Maile, Bernd Ernst ^a   Schurr, Anton ^a   Geyer, Arthur ^a   Narozny, Peter ^a  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

Heterojunction FET; Microwave devices; Molecular beam epitaxy; Pseudomorphic HFET

Indexed keywords

IMPACT IONIZATION; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; ONSTATE BREAKDOWN VOLTAGE DROP; TEMPERATURE DEPENDENT MEASUREMENT;

ELECTRIC BREAKDOWN; HETEROJUNCTIONS; IONIZATION; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TEMPERATURE MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029288955     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.1805     Document Type: Article

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