Comments on “Impact Ionization in GaAs MESFET's”

IEEE Electron Device Letters

Volumn 12, Issue 2, 1991, Pages 80-81

  Canali, C ^a   Paccagnella, A ^a   Zanoni, E ^a   Lanzieri, C ^b   Cetronio, A ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b Intecs SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC MEASUREMENTS - CURRENT; IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

DEPLETION MODE MESFET; GALLIUM ARSENIDE MESFET; IMPACT IONIZATION CURRENT; MESFET GATE CURRENT;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026108318     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75710     Document Type: Article

References (3)

1. K. Hui, C. Hu, P. George, and P. K. Ko., “Impact ionization in GaAs MESFET’s,” IEEE Electron Device Lett., vol. 11, pp. 113-115, Mar. 1990.
2. T. P. Pearsall, F. Capasso, R. Nahory, M. Pollack, and J. Cheliowsky, “The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs,” Solid-State Electron., vol. 21, pp. 297-302, 1978.
3. E. Zanoni et al., “Light emission in AlGaAs/GaAs HEMT’s and GaAs MESFET’s induced by hot carriers,” IEEE Electron Device Lett., vol. 11, pp. 487-489, Nov. 1990.