IIIA-3 Study of the Dependence of Ga0.47In0.53As/AlxIn1−xAs Power HEMT Breakdown Voltage on Schottky Layer Design and Device Layout

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 2111-2112

  Brown, J J ^a   Brown, A S ^a   Rosenbaum, S E ^a   Schmitz, A S ^a   Matloubian, M ^a   Larson, L E ^a   Melendes, M A ^a   Thompson, M A ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000565226     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239781     Document Type: Article

References (3)

1. M. Matloubian et al., accepted for IEEE MTT-S Int. Microwave Symp., 1993.
2. M. Y. Kao et al., IEEE IEDM Dig., 1992, pp. 319–321.
3. A. S. Brown et al., submitted to EMC, 1993.