Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 8, 1999, Pages 1404-1412

  Wang, Yu Chi ^a,f   Kuo, Jenn Ming ^a,c   Ren, Fan ^a,b,c   Lothian, James R ^a,d,e,f   Tsai, Huan Shang ^a   Weiner, Joseph S ^b,c   Kuo, Hao Chung ^a,d   Lin, Chun Hsiung ^a,f   Chen, Young Kai ^a,b   Mayo, William E ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c Multiplex Inc   (United States)

^d University of Illinois at Urbana Champaign   (United States)

^e Filtronic Solid State   (United States)

^f RUTGERS UNIVERSITY   (United States)

Author keywords

Gaas; HEMT; Inalgap

Indexed keywords

CARRIER MOBILITY; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DIRECT TO INDIRECT BAND ELECTRON TRANSFER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032649197     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.780387     Document Type: Article

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