Highly Efficient Double-Doped Heterojunction FET's for Battery-Operated Portable Power Applications

IEEE Electron Device Letters

Volumn 15, Issue 7, 1994, Pages 248-250

  Inosako, Keiko ^a   Matsunaga, Kohji ^a   Okamoto, Yasuhiro ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVES; PERFORMANCE; PORTABLE EQUIPMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TUNING;

BATTERY OPERATED PORTABLE POWER APPLICATION; DRAIN BIAS; DRAIN CURRENT; GATE TO DRAIN BREAKDOWN VOLTAGE; HETEROJUNCTION FIELD EFFECT TRANSISTOR; HETEROSTRUCTURE; MICROWAVE POWER PERFORMANCE; POWER ADDED EFFICIENCY; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0028463257     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.294085     Document Type: Article

References (8)

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