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Electronics Letters
Volumn 31, Issue 25, 1995, Pages 2213-2215
2.2 V Operation power hetero junction FET for personal digital cellular telephones
Author keywords

Aluminium gallium arsenide; Field effect transistors; Gallium indium arsenide; Molecular beam epitaxial growth
Indexed keywords

CELLULAR TELEPHONE SYSTEMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;
EID: 0029638931     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951488     Document Type: Article
Times cited : (11)
References (6)
  • 1
    • 0028752467 scopus 로고
    • 2V-operation pseudomorphic power HEMT with 62% power-aided efficiency for cellular phones
    • ONO, H., UMEMOTO, Y., ICHIKAWA, H., MORI, M., KUDO, M., KAGAYA, O., and IMAMURA. Y.: ‘2V-operation pseudomorphic power HEMT with 62% power-aided efficiency for cellular phones’. IEEE IEDM Tech. Dig., 1994, pp. 899-902
    • (1994) IEEE IEDM Tech. Dig. , pp. 899-902
    • ONO, H.1    UMEMOTO, Y.2    ICHIKAWA, H.3    MORI, M.4    KUDO, M.5    KAGAYA, O.6
  • 2
    • 0027307622 scopus 로고
    • 3V operation L-band power double-doped heterojunction FETs
    • IWATA, N., INOSAKO, K., and KUZUHARA, M.: ‘3V operation L-band power double-doped heterojunction FETs’. IEEE MTT-S Dig., 1993, pp. 1465-1468
    • (1993) IEEE MTT-S Dig. , pp. 1465-1468
    • IWATA, N.1    INOSAKO, K.2    KUZUHARA, M.3
  • 3
    • 0028734804 scopus 로고
    • Highly-efficient 6.6W 12GHz JFET for power amplifier
    • MATSUNAGA, K., OKAMOTO, Y., and KUZUHARA, M.: ‘Highly-efficient 6.6W 12GHz JFET for power amplifier’. IEEE IEDM Tech. Dig., 1994, pp. 895-898
    • (1994) IEEE IEDM Tech. Dig. , pp. 895-898
    • MATSUNAGA, K.1    OKAMOTO, Y.2    KUZUHARA, M.3
  • 4
    • 0028463257 scopus 로고
    • Highly efficient double-doped heterojunction FETs for battery-operated portable power applications
    • INOSAKO, K., MATSUNAGA, K., OKAMOTO, Y., and KUZUHARA, M.: ‘Highly efficient double-doped heterojunction FETs for battery-operated portable power applications’, IEEE Electron Device Lett., 1994. 15, (7), pp. 248-250
    • (1994) IEEE Electron Device Lett. , vol.15 , Issue.7 , pp. 248-250
    • INOSAKO, K.1    MATSUNAGA, K.2    OKAMOTO, Y.3    KUZUHARA, M.4
  • 5
    • 0018924890 scopus 로고
    • Analysis and improvement of intermodulation distortion in GaAs power FETs
    • HIGGINS, J.A., and KUVÅS, R.L.: ‘Analysis and improvement of intermodulation distortion in GaAs power FETs’. IEEE Trans., 1980, MTT-28, (1), pp. 9-17
    • (1980) IEEE Trans. , vol.MTT-28 , Issue.1 , pp. 9-17
    • HIGGINS, J.A.1    KUVÅS, R.L.2
  • 6
    • 85024326241 scopus 로고    scopus 로고
    • Power heterojunction FETs for low-voltage digital cellular applications
    • submitted to
    • INOSAKO, K., IWATA, N., and KUZUHARA, M.: ‘Power heterojunction FETs for low-voltage digital cellular applications’, submitted to IEICE Trans.
    • IEICE Trans.
    • INOSAKO, K.1    IWATA, N.2    KUZUHARA, M.3

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.