3V operation L-band power double-doped heterojunction FETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1993, Pages 1465-1468

  Iwata, Naotaka ^a   Inosako, Keiko ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; HETEROJUNCTIONS; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DIRECT CURRENT DRAIN BIAS; GATE TO DRAIN BREAKDOWN VOLTAGE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MICROWAVE POWER PERFORMANCE; PEAK TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0027307622     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)