Modulation-doped In0.48Al0.52P/In 0.2Ga0.8As field-effect transistors

Applied Physics Letters

Volumn 62, Issue 10, 1993, Pages 1105-1107

  Kuo, Jenn Ming ^a   Chan, Yi Jen ^b   Pavlidis, Dimitris ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

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Indexed keywords

EID: 0039438382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.108756     Document Type: Article

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