Schottky barrier heights of In0.5(AlxGa1 - X)0.5P (0 ≤ X ≤ 1) lattice matched to GaAs

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 1045-1048

  Wang, Y C ^a,b   Kuo, J M ^a   Ren, F ^a   Lothian, J R ^a   Mayo, W E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MESFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

TERSOFF'S INTRINSIC STATE SPINNING MODEL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032093461     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00120-8     Document Type: Article

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