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Volumn 168, Issue 1-3, 1986, Pages 518-530

Defective heterojunction models

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0042286138     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(86)90881-2     Document Type: Article
Times cited : (24)

References (46)
  • 1
    • 33751258749 scopus 로고
    • Heterostructure devices: A device physicist looks at interfaces
    • See, e.g., for an excellent overview
    • (1983) Surface Science , vol.132 , pp. 132
    • Kroemer1
  • 9
    • 84918152768 scopus 로고    scopus 로고
    • Note that one of the “best” current measurements of band offsets, used in refs. [3–5], obtains the band offset from a difference between two numbers typically 5 times larger than the work function.
  • 10
    • 84918152767 scopus 로고
    • presented at the 12th Ann. Conf. on the Physics and Chemistry of Semiconductor Interfaces (PCSI-12)
    • Tempe, AZ, to be published
    • (1985) J. Vacuum Sci. Technol.
    • Van Vechten1
  • 16
    • 84918152766 scopus 로고
    • presented at the 12th Ann. Conf. on the Physics and Chemistry of Semiconductor Interfaces (PCSI-12)
    • Tempe, AZ, to be published
    • (1985) J. Vacuum Sci. Technol.
    • Mailhot1    Duke2
  • 29
    • 84918152765 scopus 로고
    • presented at the 12th Ann. Conf. on the Physics and Chemistry of Semiconductor Interfaces (PCSI-12)
    • See, e.g., Tempe, AZ, to be published
    • (1985) J. Vacuum Sci. Technol.
    • Wang1    Stern2
  • 39
    • 84918152763 scopus 로고    scopus 로고
    • Please note that the difference between p-n and n-p junctions derives from the dependence of pinning position upon doping type. For a pinning position independent of doping type, there should be no effect in a homojunction; the effect in a pinned heterojunction would depend upon the difference between pinned Fermi-level alignment and unpinned band alignments, as discussed later in this manuscript in relating band offsets and Schottky barrier heights, and would be independent of doping types.
  • 46
    • 51249186446 scopus 로고
    • High-resolution photoemission yield and surface states in semiconductors
    • (1977) Il Nuovo Cimento B , vol.39 B , pp. 768
    • Sébenne1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.