A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 519-526

  Lee, Jong Lam ^a   Mun, Jae Kyoung ^a   Kim, Haecheon ^a   Lee, Jai Jin ^a   Park, Hyung Moo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL COMMUNICATION SYSTEMS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MULTIPLEXING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TELEPHONE SYSTEMS; VOLTAGE MEASUREMENT;

CODE DIVISION MULTIPLE ACCESS; DIGITAL HAND HELD PHONES; DRAIN VOLTAGE; GATE TO DRAIN BREAKDOWN VOLTAGE; LINEARITY FIGURE OF MERIT; POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 0030126222     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485532     Document Type: Article

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