5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 229-231

  Lai, Yeong Lin ^b   Chang, Edward Y ^a,b   Chang, Chun Yen ^a,b   Chen, T K ^b   Liu, T H ^c   Wang, S P ^c   Chen, T H ^c   Lee, C T ^d  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Hexawave Inc   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); PERSONAL COMMUNICATION SYSTEMS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

EFFECTIVE KNEE VOLTAGE; LINEAR GAIN; POWER ADDED EFFICIENCY; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030150086     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491838     Document Type: Article

References (7)

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