1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiency

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 181-184

  Tanaka, Tsuyoshi ^a   Furukawa, Hidetoshi ^a   Takenaka, Hiroshi ^a   Ueda, Tetsuzo ^a   Noma, Atsushi ^a   Fukui, Takeshi ^a   Tateoka, Kazuki ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LITHOGRAPHY; PHOTORESISTS; POWER AMPLIFIERS; PRODUCT DESIGN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

KNEE VOLTAGE; OUTPUT IMPEDANCE; PATTERN EDGE LINE; PHASE SHIFT LITHOGRAPHY; POWER ADDED EFFICIENCY; SPIKE GATE;

FIELD EFFECT TRANSISTORS;

EID: 0029518357     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)