High performance pseudomorphic InGaP/InGaAs power HEMTs

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1913-1915

  Ren, F ^a   Lothian, J R ^a   Tsai, H S ^a   Kuo, J M ^a   Lin, J ^a   Weiner, J S ^a   Ryan, R W ^a   Tate, A ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

POWER TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031357802     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00048-8     Document Type: Article

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