Interface optimization of AlInP/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 393-398

  Kuo, J M ^d   Kuo, H C ^a   Cheng, J Y ^a   Wang, Y C ^b   Lu, Y ^b   Mayo, W E ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CATHODOLUMINESCENCE; COMPUTER SIMULATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DOUBLE CRYSTAL X RAY DIFFRACTION; GAS SOURCE MOLECULAR BEAM EPITAXY; MULTIPLE QUANTUM WELL HETEROSTRUCTURE; SOURCE SWITCHING PROCEDURE;

SEMICONDUCTOR GROWTH;

EID: 0030085242     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00469-6     Document Type: Article

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