2.9 V Operation GaAs Power MESFET with 31.5-dBm Output Power and 64% Power-Added Efficiency

IEEE Electron Device Letters

Volumn 15, Issue 9, 1994, Pages 324-326

  Lee, Jong Lam ^a   Kim, Haecheon ^a   Mun, Jae Kyoung ^a   Lee, Hae Gwon ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DRAIN BIAS; HIGH LOW DOPED CHANNEL STRUCTURE; POWER ADDED EFFICIENCY; POWER MESFET;

MESFET DEVICES;

EID: 0028499868     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.311122     Document Type: Article

References (9)

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