An In0.5(Al0.3Ga0.7)0.5P/ln 0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2V operation

Electronics Letters

Volumn 34, Issue 6, 1998, Pages 594-595

  Wang, Y C ^a,b   Kuo, J M ^a   Lothian, J R ^a   Ren, F ^a   Tsai, H S ^a   Weiner, J S ^a   Lin, J ^a   Tate, A ^a   Chen, Y K ^a   Mayo, W E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Piscataway   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

POWER ADDED EFFICIENCY (PAE); SATURATED OUTPUT POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032023313     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980430     Document Type: Article

References (8)

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