Single- and double-heterojunction pseudomorphic In0.5(Al0.3Ga0.7)0.5P/In 0.2Ga0.8 as high electron mobility transistors grown by gas source molecular beam epitaxy

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 550-552

  Wang, Y C ^a,b   Kuo, J M ^a   Ren, F ^a   Lothian, J R ^a   Weiner, J S ^a   Lin, J ^a   Mayo, W E ^b   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b The State University of New Jersey   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SHORT CIRCUIT CURRENTS; TRANSCONDUCTANCE;

OSCILLATION FREQUENCY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031274779     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641442     Document Type: Article

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