Optimization of the aluminum composition in ln0.5(AlxGa1-x)0.5P/ln 0.2Ga0.8As high electron mobility transistors for power applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1404-1407

  Kuo, J M ^a   Wang, Y C ^a,b   Lothian, J R ^a   Tsai, H S ^a   Chen, Y K ^a   Mayo, W E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Piscataway   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744304026     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. M. O. Watanabe and Y. Ohba, Appl. Phys. Lett. 50, 906 (1987).
2. K. Yamashita, T. Kita, H. Nakayama, and T. Nishino, Phys. Rev. B 53, 15713 (1996).
3. D. J. Mowbray, O. P. Kowalski, M. Hopkinson, S. Skolnick, and J. P. R. David, Appl. Phys. Lett. 65, 213 (1994).
4. J. S. Nelson, E. D. Jones, S. M. Myers, D. M. Follstaedt, H. P. Hjalmarson, J. E. Schirber, R. P. Schneider, J. E. Fouquet, V. M. Robbins, and K. W. Carey, Phys. Rev. B 53, 15 893 (1996).
5. S. P. Najda, A. H. Kean, M. D. Dawson, and G. Duggan, J. Appl. Phys. 77, 3412 (1995).
6. M. O. Watanabe and Y. Ohba, Appl. Phys. Lett. 60, 1032 (1986).
7. J. M. Kuo, H. C. Kuo, J. Y. Cheng, Y. C. Wang, Y. Lu, and W. E. Mayo, J. Cryst. Growth 158, 393 (1996).
8. Y. C. Wang, J. M. Kuo, F. Ren, J. R. Lothian, J. S. Weiner, J. Lin, W. E. Mayo, and Y. K. Chen, IEEE Electron Devices Lett. 18, 550 (1997).
9. Y. C. Wang, J. M. Kuo, F. Ren, J. R. Lothian, W. E. Mayo, and Y. K. Chen, Solid-State Electron, (to be published).
10. Y. C. Wang, J. M. Kuo, J. R. Lothian, F. Ren, H. S. Tsai, J. S. Weiner, J. Lin, A. Tate, W. E. Mayo, and Y. K. Chen, 55th Device Research Conference, Fort Collins, CO, 23-25 June 1997, p. 70.
11. Y. C. Wang, J. M. Kuo, J. R. Lothian, F. Ren, H. S. Tsai, J. S. Weiner, J. Lin, A. Tate, Y. K. Chen, and W. E. Mayo, Electron. Lett, (accepted).
12. T. Tanaka, H. Furukawa, H. Takenaka, T. Ueda, A. Noma, T. Fukui, K. Tateoka, and D. Ueda, Tech. Dig. Int. Electron Devices Meet. 181 (1995).
13. J.-L. Lee, J. K. Mun, H. Kim, J.-J. Lee, and H.-M. Park, IEEE Trans. Electron Devices 43, 519 (1996).
14. K. Inosako, N. Iwata, and M. Kuzuhara, Tech. Dig. Int. Electron Devices Meet. 185 (1995).
15. S. Murai, T. Sawai, T. Tamaguchi, S. Matsushita, and Y. Harada, IEEE 14th GaAs IC Symposium Technical Digest, 1992, p. 139.