Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengths

Microelectronic Engineering

Volumn 21, Issue 1-4, 1993, Pages 419-422

  Mikolajick, T ^a   Ryssel, H ^a  

^a NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION THEORY; FIELD EFFECT TRANSISTORS; MEASUREMENT ERRORS; MICROELECTRONIC PROCESSING; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; STATISTICAL METHODS; ULSI CIRCUITS;

DOPANT FLUCTUATIONS; MOS TRANSISTOR THRESHOLD VOLTAGE; SEMICONDUCTOR CHANNEL LENGTH;

MOSFET DEVICES;

EID: 0027578886     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90103-C     Document Type: Article

References (5)

1. Fundamental Limitations in Microelectronics-I. MOS Technology
2. Nanoelectronics
3. The effect of Random Doping Fluctuations on the Fermi Level in a Semiconductor