A 40 nm Gate Length n-MOSFET

IEEE Transactions on Electron Devices

Volumn 42, Issue 10, 1995, Pages 1822-1830

  Ono, Mizuki ^a   Saito, Masanobu ^a   Yoshitomi, Takashi ^a   Fiegna, Claudio ^b   Ohguro, Tatsuya ^a   Iwai, Hiroshi ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF FERRARA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); HOT CARRIERS; IONIZATION; RELIABILITY; SEMICONDUCTING GLASS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS;

CURRENT DRIVABILITY; GATE ELECTRODES; GATE LENGTH; IMPACT IONIZATION RATE; ISOTROPIC OXYGEN PLASMA ASHING; PHOSPHORUS DOPED SILICATED GLASS; SHORT CHANNEL EFFECTS; SOLID PHASE DIFFUSION; SOURCE AND DRAIN JUNCTIONS;

MOSFET DEVICES;

EID: 0029391690     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464413     Document Type: Letter

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