High-Power V-Band Pseudomorphic Ingaas Hemt

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 213-214

  Tan, K L ^a   Streit, Dwight C ^a   Dia, R M ^a   Wang, Shing K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING INDIUM COMPOUNDS;

HEMT; HIGH-POWER TRANSISTORS; V-BAND TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026152307     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79559     Document Type: Article

References (8)

1. P. Saunier, R. J. Matyi, and K. Bradshaw, “A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz,” IEEE Electron Device Lett., vol. 9, no. 8, pp. 397–398, Aug. 1988.
2. P. Saunier and H. Q. Tserng, “AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2231–2235, Oct. 1989.
3. B. Kim et al., “Millimeter-wave power operation of an AlGaAs/ InGaAs/GaAs quantum well MISFET,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2236–2242, Oct. 1989.
4. P.M. Smith et al., “A 0.15 μm gate length pseudomorphic HEMT,” in IEEE MTT-S Symp. Dig., 1989, pp. 983–986.
5. M. Y. Kao et al., “Very high power-added efficiency and low-noise 0.15-&muml;m gate-length pseudomorphic HEMT's,” IEEE Electron Device Lett., vol. 10, no. 12, pp. 580–582, Dec. 1989.
6. P. M. Smith et al., “A 0.25-&muml;m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz,” IEEE Electron Device Lett., vol. 10, no. 10, pp. 437–439, Oct. 1989.
7. D. C. Streit et al., “High gain tv-band pseudomorphic InGaAs power HEMT's,” IEEE Electron Device Lett., vol. 12, pp. 149–150, Apr. 1991.
8. K. L. Tan et al., “Ultralow noise W-band pseudomorphic InGaAs HEMT's,” IEEE Electron Device Lett., vol. 11, no. 7, pp. 303–305, July 1990.