Two-Dimensional Simulation of Submicrometer GaAs MESFET’s: Surface Effects and Optimization of Recessed Gate Structures

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 824-830

  Heliodore, Frederic ^a   Lefebvre, Marc ^a   Salmer, Georges ^a   El Sayed, Osman L ^b  

^a UNIV LILLE   (France)

^b CAIRO UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT - MATHEMATICAL MODELS;

ENERGY RELAXATION EQUATION; METAL SEMICONDUCTOR FET (MESFET); RECESSED GATE STRUCTURE OPTIMIZATION; SURFACE POTENTIAL EFFECTS;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0024048646     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3332     Document Type: Article

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