Optimization of the n+ Ledge Channel Structure for GaAs Power FET's

IEEE Transactions on Electron Devices

Volumn 33, Issue 11, 1986, Pages 1818-1824

  Macksey, H M ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - OPTIMIZATION; TRANSISTORS, FIELD EFFECT;

GALLIUM ARSENIDE POWER FET; LEDGE CHANNEL STRUCTURE OPTIMIZATION;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0022808706     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22747     Document Type: Article

References (7)

1. S. H. Wemple, W. C. Niehaus, H. Fukui, J. C. Irvin, H. M. Cox, J. C. M. Hwang, J. V. DiLorenzo, and W. O. Schlosser “Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions,” IEEE Trans. Electron Devices, vol. ED-28, pp. 834–840, 1981.
2. P. Saunier and H. D. Shih “High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy,” Appl. Phys. Lett., vol. 42, pp. 966–968, 1983.
3. H. M. Macksey, H. Q. Tserng, and H. D. Shih, “A 2-W Ku-band monolithic GaAs FET amplifier,” in IEEE 1985 Microwave Millimeter Wave Monolithic Circuits Symp. Tech. Dig., pp. 27–30.
4. H. M. Macksey, F. H. Doerbeck, and R. C. Vail “Optimization of GaAs power MESFET device and material parameters for 15-GHz operation,” IEEE Trans. Electron Devices, vol. ED-27, pp. 467–471, 1980.
5. H. M. Macksey and R. D. Hudgens “Fabrication of n + ledge channel structure for GaAs FET's with a single lithography step,” Electron. Lett., vol. 21, pp. 955–957, 1985.
6. H. M. Macksey “GaAs power FET's having the gate recess narrower than the gate,” IEEE Electron Device Lett., vol. EDL-7, pp. 69–70, 1986.
7. L. F. Eastman, “Microwave semiconductor devices: State-of-the-art and limiting effects,” in IEDM Tech. Dig., pp. 364–367, 1978.